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| SGSF344 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR s s s HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: s SWITCH MODE POWER SUPPLIES s HORIZONTAL DEFLECTION FOR COLOUR TVS AND MONITORS DESCRIPTION The SGSF344 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V CEO VEBO IC I CM IB I BM P tot T s tg Tj June 1997 Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction T emperature o Valu e 1200 600 7 7 12 5 8 85 -65 to 150 150 Un it V V V A A A A W o o C C 1/6 SGSF344 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 1.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1200 V V EC = 380 V V EC = 600 V V BE = 7 V I C = 100 mA I C = 3.5 A I C = 2.5 A I C = 3.5 A I C = 2.5 A IB = 0.7 A IB = 0.35 A IB = 0.7 A IB = 0.35 A 0.7 2.2 0.18 0.7 1.5 0.2 0.7 1 0.2 1.4 0.1 2.8 0.2 600 1.5 1.5 1.5 1.5 1.2 3.5 0.4 Min. Typ . Max. 200 200 2 1 Un it A A mA mA V V V V V s s s s s s s s s s s V CEO(sus ) Collector-Emitter Sustaining Voltage V CE(sat ) V BE(s at) t ON ts tf t ON ts tf t ON ts tf ts tf Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn-on T ime Storage Time Fall T ime Turn-on T ime Storage Time Fall T ime Turn-on T ime Storage Time Fall T ime Storage Time Fall T ime RESISTIVE LO AD IC = 3.5 A V CC = 250 v I B1 = -1.4 A I B1 = 0.7 A RESISTIVE LO AD IC = 3.5 A v CC = 250 v I B1 = 0.7 A I B1 = -1.4 A With Antisaturation Network RESISTIVE LO AD IC = 3.5 A V CC = 250 V V BE (off) = - 5 V I B1 = 0.7 A INDUCTIVE LOAD hFE = 5 I C = 3.5 A V CL = 450 V V BE(off ) = -5 V L = 300 H R BB = 1.2 INDUCTIVE LOAD I C = 3.5 A hFE = 5 V CL = 450 V V BE(off ) = -5 V L = 300 H R BB = 1.2 o T c = 100 C ts tf Storage Time Fall T ime 4 0.3 s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/6 SGSF344 Safe Operating Area Thermal Impedance Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/6 SGSF344 Resistive Load Switching Times Inductive Load Switching Times Switching Times Percentance Variation Reverse Biased SOA 4/6 SGSF344 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G H2 P011C 5/6 SGSF344 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6 |
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